PMV56XN Datasheet, PDF (6/12 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET

Philips Semiconductors
PMV56XN
µTrenchMOS™ extremely low level FET
03ae93
10
4.5 V 3 V 2.5 V
ID
(A)
8
2V
6
10
ID VDS > ID x RDSon
(A)
8
6
03ae95
4
4
2
VGS = 1.5 V
0
0
0.5
1 _{VDS (V)} 1.5
2
Tj = 150 °C
25 °C
0
0
1
2 VGS (V) 3
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.1
RDSon
(Ω)
0.09
Tj = 25 °C
0.08
0.07
0.06
03ae94
2
VGS = 2.5 V
a
1.5
3V
1
0.5
4.5 V
03ad57
0.05
0
2
4
6
8 _{ID (A)} 10
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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