PMV56XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET

PMV56XN
µTrenchMOS™ extremely low level FET
Rev. 02 — 24 June 2004
M3D088
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s TrenchMOS™ technology
s Low threshold voltage
s Very fast switching
s Subminiature surface mount package.
1.3 Applications
s Battery management
s High-speed switch
s Low power DC-to-DC converter.
1.4 Quick reference data
s V_DS ≤ 20 V
s P_tot ≤ 1.92 W
s I_D ≤ 3.76 A
s R_DSon ≤ 85 mΩ
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
Simplified outline
gate (g)
3
source (s)
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
mbb076 s