PMEG4010EPK_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 40 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
10
I_F
(A)
1
10^-1
(1)
(2)
(3) (4) (5)
10^-2
006aad000
10^-3
10^-4
0.0
0.4
0.8
1.2
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 5. Forward current as a function of forward
voltage; typical values
100
C_d
(pF)
80
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60
40
20
0
0
10
20
f = 1 MHz; T_amb = 25 °C
30
40
V_R (V)
Fig 7. Diode capacitance as a function of reverse
voltage; typical values
10^-2
I_R
(A) _10-3
10^-4
10^-5
10^-6
10^-7
10^-8
10^-9
10^-10
0
(1)
(2)
(3)
(4)
10
20
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
006aad001
30
40
V_R (V)
Fig 6. Reverse current as a function of reverse
voltage; typical values
0.8
P_F(AV)
(W)
0.6
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(4)
(3)
(2)
0.4
(1)
0.2
0.0
0.0
0.5
1.0
1.5
I_F(AV) (A)
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 8. Average forward power dissipation as a
function of average forward current; typical
values
PMEG4010EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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