 English |
|
|
|
|
|
|
|
| PMEG4010EPK_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – 40 V, 1 A low VF MEGA Schottky barrier rectifier | |||
| |||
| ◁ |
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
006aac999
0.05
0.02
0
0.01
10
10-3
10-2
10-1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
VFRM
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
Conditions
IF = 100 mA; pulsed; tp ⤠300 µs;
δ ⤠0.02; Tj = 25 °C
IF = 500 mA; pulsed; tp ⤠300 µs;
δ ⤠0.02; Tj = 25 °C
IF = 700 mA; pulsed; tp ⤠300 µs;
δ ⤠0.02; Tj = 25 °C
IF = 1 A; pulsed; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
VR = 10 V; Tj = 25 °C
VR = 40 V; Tj = 25 °C
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
Min Typ Max Unit
-
345 390 mV
-
440 500 mV
-
480 550 mV
-
540 600 mV
-
0.6 4
µA
-
3
20 µA
-
50
60
pF
-
20
25
pF
-
3
-
ns
-
460 -
mV
PMEG4010EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 6 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese