PMEG3002AELD_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 30 V, 0.2 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3002AELD
30 V, 0.2 A low V_F MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V_F
forward voltage
[1]
I_F = 0.1 mA
-
120
I_F = 1 mA
-
180
I_F = 10 mA
-
250
I_F = 100 mA
-
355
I_F = 200 mA
-
430
I_R
reverse current
V_R = 10 V
-
3.5
V_R = 30 V
-
12
C_d
diode capacitance
V_R = 1 V; f = 1 MHz
-
18
t_rr
reverse recovery time
[2] _-
6
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
190
250
300
400
480
10
50
25
-
Unit
mV
mV
mV
mV
mV
μA
μA
pF
ns
10
I_F
(A)
1
10^–1
10^–2
(1)
(2)
(3) (4) (5)
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10^–3
10^–4
0.0
0.2
0.4
0.6
0.8
1.0
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 5. Forward current as a function of forward
voltage; typical values
10^–1
I_R
(A)
10^–2
10^–3
10^–4
006aac585
(1)
(2)
(3)
10^–5
(4)
10^–6
10^–7
10^–8
0
(5)
10
20
30
V_R (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 6. Reverse current as a function of reverse
voltage; typical values
PMEG3002AELD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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