PMEG3002AELD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG3002AELD
30 V, 0.2 A low V_F MEGA Schottky barrier rectifier
Rev. 1 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra
small Surface-Mounted Device (SMD) plastic package with visible and solderable side
pads.
1.2 Features and benefits
„ Forward current: I_F ≤ 0.2 A
„ Reverse voltage: V_R ≤ 30 V
„ Low forward voltage: V_F ≤ 480 mV
„ Ultra small and leadless SMD plastic
package
„ AEC-Q101 qualified
„ Solderable side pads
„ Package height typ. 0.37 mm
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
„ Ultra high-speed switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
I_F(AV)
I_R
V_R
V_F
average forward
current
reverse current
reverse voltage
forward voltage
square wave; δ = 0.5; f = 20 kHz
T_amb ≤ 125 °C
[1] _-
T_sp ≤ 140 °C
-
V_R = 10 V
-
-
I_F = 200 mA
[2] _-
-
0.2 A
-
0.2 A
3.5 10 μA
-
30 V
430 480 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm².
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.