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PMEG2020EPK_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V, 2 A low VF MEGA Schottky barrier rectifier
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NXP Semiconductors
PMEG2020EPK
20 V, 2 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
duty cycle =
1
0.75
0.5
006aad025
0.33
0.25
0.2
0.1
0.05
0.02
0
0.01
10
10-3
10-2
10-1
1
Ceramic PCB, Al2O3, standard footprint
10
102
103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
VF
forward voltage
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
IF = 500 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IR
reverse current
VR = 10 V; Tj = 25 °C
VR = 20 V; Tj = 25 °C
Cd
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
Dynamic characteristics
trr
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
VFRM
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
-
230 260 mV
-
290 330 mV
-
330 380 mV
-
395 450 mV
-
70
350 µA
-
220 900 µA
-
105 120 pF
-
40
50
pF
-
5
-
ns
-
320 -
mV
PMEG2020EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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