PMEG2020EPK_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V, 2 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2020EPK
20 V, 2 A low VF MEGA Schottky barrier rectifier
Symbol
Parameter
Conditions
I_R
reverse current
V_R = 10 V; T_j = 25 °C
Dynamic characteristics
t_rr
reverse recovery time I_R = 0.5 A; I_F = 0.5 A; I_R(meas) = 0.1 A;
T_j = 25 °C
Min Typ Max Unit
-
70
350 µA
-
5
-
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
2
Graphic symbol
1
2
sym001
Transparent top view
DFN1608D-2 (SOD1608)
[1] The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMEG2020EPK
DFN1608D-2 DFN1608D-2: leadless ultra small plastic package; 2 terminals
Version
SOD1608
PMEG2020EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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