PHP96NQ03LT Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
80
I_D
T_j = 25 ºC
(A)
60
10 V 5 V 4.5 V 4 V
03af12
3.5 V
80
I_D ^VDS ^{> I}D ^{x R}DSon
(A)
60
03af14
40
40
3V
20
0
0
V_GS = 2.5 V
0.2
0.4
0.6
0.8
1
V_DS (V)
20
0
0
175 ºC
T_j = 25 ºC
1
2
3
4
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.016
03af13
2
R_DSon T_j = 25 ºC
V_GS = 3.5 V
a
(Ω)
1.6
0.012
0.008
4V
1.2
4.5 V
5V
0.8
0.004
10 V
0.4
03af18
0
0
20
40
60
80
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
T_j (ºC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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