PHP96NQ03LT Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
120
P_der
(%)
80
03aa16
120
I_der
(%)
80
03af09
40
40
0
0
50
100
150
200
T_mb (^oC)
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
T_mb (ºC)
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
I_D
(A)
R_DSon = V_DS / I_D
102
10
DC
t_p = 10 µs
100 µs
1 ms
10 ms
100 ms
03af11
1
1
10
102
V_DS (V)
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3 of 14