PHP222NQ04LT Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET

Philips Semiconductors
PHP/PHB222NQ04LT
N-channel TrenchMOS™ logic level FET
240
ID
(A)
160
10 V 4 V
5V
3.6 V
03aq31
Tj = 25 °C
3.4 V
3.2 V
80
ID
VDS > ID x RDSon
(A)
60
03aq33
40
80
2.8 V
VGS = 2.4 V
0
0
0.5
1
1.5 _{VDS (V)} 2
20
0
0
Tj = 175 °C
25 °C
1
2
3 _{VGS (V)} 4
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
03aq32
2
RDSon Tj = 25 °C
(mΩ)
VGS = 3.4 V
a
8
1.5
6
3.6 V
1
4
4V
5V
10 V
0.5
2
03aa27
0
0
80
160
240
ID (A)
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13156
Product data
Rev. 01 — 13 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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