PHP222NQ04LT Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOSTM logic level FET

Philips Semiconductors
PHP/PHB222NQ04LT
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V_(BR)DSS drain-source breakdown voltage
I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
40 -
-
V
36 -
-
V
V_GS(th) gate-source threshold voltage
I_D = 1 mA; V_DS = V_GS; Figure 9 and 10
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
1
1.5 2
V
0.5 -
-
V
-
-
2.2 V
I_DSS
drain-source leakage current
I_GSS
gate-source leakage current
V_DS = 40 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±15 V; V_DS = 0 V
-
-
1
µA
-
-
500 µA
-
2
100 nA
R_DSon drain-source on-state resistance
V_GS = 10 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
V_GS = 5 V; I_D = 25 A; Figure 7 and 8
V_GS = 4.5 V; I_D = 25 A; Figure 8
-
2.4 2.8 mΩ
-
4.6 5.3 mΩ
-
2.7 3.2 mΩ
-
-
3.5 mΩ
Dynamic characteristics
Q_g(tot) total gate charge
I_D = 25 A; V_DD = 32 V; V_GS = 5 V; Figure 13 -
93.6 -
nC
Q_gs
gate-source charge
-
16.8 -
nC
Q_gd
gate-drain (Miller) charge
-
36.8 -
nC
C_iss
C_oss
C_rss
t_d(on)
t_r
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
Figure 11
V_DD = 30 V; R_G = 1.2 Ω;
V_GS = 5 V; R_G = 10 Ω
-
7880 -
pF
-
1400 -
pF
-
610 -
pF
-
68 -
ns
-
268 -
ns
t_d(off)
turn-off delay time
-
257 -
ns
t_f
fall time
-
192 -
ns
Source-drain diode
V_SD
source-drain (diode forward) voltage I_S = 25 A; V_GS = 0 V; Figure 12
-
0.79 1.2 V
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs; V_GS = 0 V
-
70 -
ns
Q_r
recovered charge
-
127 -
nC
9397 750 13156
Product data
Rev. 01 — 13 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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