English
Language : 

PBSS4350T_15 Datasheet, PDF (6/10 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
◁
NXP Semiconductors
50 V; 3 A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4350T
103
handbook, halfpage
VCEsat
(mV)
102
10
MLD871
(1)
(2)
(3)
103
handbook, halfpage
VCEsat
(mV)
102
10
MLD872
(1)
(2)
(3)
1
10−1
1
10
102
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
1
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MLD873
104
handbook, halfpage
VCEsat
(mV)
103
MLD874
102
10
10−1
1
(1)
(2)
(3)
10
102
103
104
IC (mA)
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
102
(1)
(2)
(3)
10
10−1
1
10
102
103
104
IC (mA)
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 09
6
 ▷