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PBSS4350T_15 Datasheet, PDF (4/10 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
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NXP Semiconductors
50 V; 3 A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4350T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
fT
Cc
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
IE = 0; VCB = 50 V
IE = 0; VCB = 50 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 2 V
IC = 500 mA; VCE = 2 V
IC = 1 A; VCE = 2 V; note 1
IC = 2 A; VCE = 2 V; note 1
IC = 3 A; VCE = 2 V; note 1
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 2 A; IB = 100 mA; note 1
IC = 2 A; IB = 200 mA; note 1
IC = 3 A; IB = 300 mA; note 1
IC = 2 A; IB = 200 mA; note 1
IC = 2 A; IB = 100 mA; note 1
IC = 3 A; IB = 300 mA; note 1
IC = 1 A; VCE = 2 V; note 1
IC = 100 mA; VCE = 5 V;
f = 100 MHz
IE = Ie = 0; VCB = 10 V; f = 1 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MIN.
−
−
−
300
300
300
200
100
−
−
−
−
−
−
−
−
1.2
100
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
100
−
−
−
−
MAX.
100
50
100
−
−
−
−
−
80
160
280
260
370
130
1.1
1.2
−
−
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
−
−
25
pF
2004 Jan 09
4
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