PBSS4240X_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – 40 V, 2 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4240X
40 V, 2 A NPN low VCEsat (BISS) transistor
Symbol
V_BEsat
V_BEon
f_T
C_c
1200
h_FE
800
400
Parameter
Conditions
base-emitter saturation I_C = 1 A; I_B = 100 mA; pulsed;
voltage
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
base-emitter turn-on
voltage
V_CE = 5 V; I_C = 1 A; pulsed; t_p ≤ 300 µs;
δ ≤ 0.02 ; T_amb = 25 °C
transition frequency
V_CE = 10 V; I_C = 50 mA; f = 100 MHz;
T_amb = 25 °C
collector capacitance
V_CB = 10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
Min Typ Max Unit
-
-
1.2 V
-
-
1.1 V
150 -
-
MHz
-
-
10
pF
006aad159
2.0
I_C
I_{B =} 15 mA 12 9
(A)
006aad160
(1)
1.6
6
4.5
1.2
3
(2)
0.8
1.5
(3)
0.4
0
1
10
10²
V_CE = 5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = -55 °C
10³
10⁴
I_C (mA)
Fig. 5. DC current gain as a function of collector
current; typical values
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
PBSS4240X
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 October 2012
© NXP B.V. 2012. All rights reserved
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