PBSS4240X_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 40 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4240X
40 V, 2 A NPN low VCEsat (BISS) transistor
15 October 2012
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:
PBSS5240X.
1.2 Features and benefits
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High efficiency due to less heat generation
1.3 Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
I_CRM
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
repetitive peak
collector current
I_C = 1 A; I_B = 100 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
t_p ≤ 20 ms; δ ≤ 0.33 ; pulsed
Min Typ Max Unit
-
-
40
V
-
-
2
A
-
-
3
A
-
-
260 mΩ
-
-
2.5 A
Scan or click this QR code to view the latest information for this product