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NX7002BKM_15 Datasheet, PDF (6/16 Pages) NXP Semiconductors – 60 V, N-channel Trench MOSFET
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NXP Semiconductors
NX7002BKM
60 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; VDS = 0 V; Tj = 25 °C
VGS = -5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 200 mA; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 150 °C
VGS = 5 V; ID = 200 mA; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 200 mA; Tj = 25 °C
transconductance
RG
internal gate
f = 2.5 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 30 V; ID = 200 mA; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 50 V; ID = 200 mA; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 200 mA; VGS = 0 V; Tj = 25 °C
NX7002BKM
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 December 2014
Min Typ Max Unit
60
-
-
V
1.1 1.6 2.1 V
-
-
1
µA
-
-
10
µA
-
-
-10 µA
-
-
1
µA
-
-
-1
µA
-
-
0.3 µA
-
-
-0.3 µA
-
2.2 2.8 Ω
-
4.5 5.7 Ω
-
2.5 3.2 Ω
-
600 -
mS
-
2.5 -
Ω
-
1
-
nC
-
0.12 -
nC
-
0.18 -
nC
-
23.6 -
pF
-
4.6 -
pF
-
3
-
pF
-
4.7 -
ns
-
4.3 -
ns
-
6.9 -
ns
-
2.9 -
ns
-
0.87 1.2 V
© NXP Semiconductors N.V. 2014. All rights reserved
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