NX7002BKM_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, N-channel Trench MOSFET

NX7002BKM
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
60
V
V_GS
gate-source voltage
-20 -
20
V
I_D
drain current
V_GS = 10 V; T_amb = 25 °C
[1]
-
-
350 mA
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 200 mA; T_j = 25 °C
resistance
-
2.2 2.8 Ω
[1] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm}²_.
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