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BYC5X-600P_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC5X-600P
Hyperfast power diode
11. Characteristics
Table 8. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 5 A; Tj = 25 °C; Fig. 6
IF = 5 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 7
IRM
peak reverse recovery IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
current
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
2.5 3.3 V
-
1.35 2.1 V
-
-
10
µA
-
-
0.6 mA
-
19
-
nC
-
45
-
nC
-
11
-
ns
-
23
-
ns
-
28
-
ns
-
13
25
ns
-
1.7 -
A
-
3.2 -
A
BYC5X-600P
Product data sheet
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24 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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