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BUX84 Datasheet, PDF (6/12 Pages) Mospec Semiconductor – POWER TRANSISTORS(2A,400-450V,40W)
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84; BUX85
handbook, full pagewidth
10
IC ICM max
(A)
IC max
(1)
1
I
10−1
10−2
δ = 0.01
tp =
2 µs
5 µs
10 µs
20 µs
50 µs
100 µs
II
200 µs
500 µs
1 ms
(2)
2 ms
5 ms
10 ms
DC
III
MGB939
10−3
10
IV
102
103
VCE (V)
104
BUX85.
Tmb ≤ 50 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
Fig.5 Forward bias SOAR.
1997 Aug 13
6