BUX84 Datasheet, PDF (4/12 Pages) Mospec Semiconductor – POWER TRANSISTORS(2A,400-450V,40W)

Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84; BUX85
SYMBOL
PARAMETER
CONDITIONS
Switching times in horizontal deflection circuit (see Fig.11)
t_on
turn-on time
t_f
fall time
t_s
storage time
I_Con = 1 A; I_Bon = 200 mA;
I_Boff = −400 mA; V_CC = 250 V
I_Con = 1 A; I_Bon = 200 mA;
I_Boff = −400 mA; V_CC = 250 V
I_Con = 1 A; I_Bon = 200 mA;
I_Boff = −400 mA; V_CC = 250 V;
T_mb = 95 °C
I_Con = 1 A; I_Bon = 200 mA;
I_Boff = −400 mA; V_CC = 250 V
Note
1. Measured with a half-sinewave voltage (curve tracer).
MIN. TYP. MAX. UNIT
−
0.2 0.5 µs
−
0.4 −
µs
−
−
1.4 µs
−
2
3.5 µs
andbook, halfpage
+ 50 V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
30 to 60 Hz
300 Ω
1Ω
MGE252
handbookI,_Chalfpage
(mA)
250
200
100
0
MGE239
min ^{VCE (V)}
VCEOsust
Fig.2 Test circuit for collector-emitter
sustaining voltage.
Fig.3 Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
4