 English |
|
|
|
|
|
|
|
| BUK9Y19-100E_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V, 19 m logic level MOSFET in LFPAK56 | |||
| |||
| ◁ |
NXP Semiconductors
BUK9Y19-100E
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Conditions
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 80 V; RL = 5 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
-
14.1 -
nC
-
3814 5085 pF
-
222 266 pF
-
133 182 pF
-
18.5 -
ns
-
36.8 -
ns
-
59.6 -
ns
-
34.3 -
ns
-
0.8 1.2 V
-
38.7 -
ns
-
67.7 -
nC
150
ID
(A)
100
003aai929
VGS(V) = 10
4.5
3
40
RDSon
(mΩ)
30
003aai930
2.8
20
50
2.6
10
Fig. 6.
2.4
2.2
0
0
1
2
3
4
VDS(V)
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
0
0
2
4
6
8
10
VGS(V)
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK9Y19-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 November 2013
© NXP N.V. 2013. All rights reserved
6 / 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese