BUK9Y19-100E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 100 V, 19 m logic level MOSFET in LFPAK56

BUK9Y19-100E
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56
6 November 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Applications
• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
3. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 5 V; I_D = 15 A; T_j = 25 °C; Fig. 11
resistance
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 5 V; I_D = 15 A; V_DS = 80 V;
T_j = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
-
-
100 V
-
-
56
A
-
-
167 W
-
14.6 19
mΩ
-
14.1 -
nC
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