BUK7640-100A Datasheet, PDF (6/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7640-100A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.17. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
100
I_AV
25ºC
10
Tj prior to avalanche 150ºC
1
0.001
0.01
0.1
1
10
Avalanche Time, t_AV (ms)
Fig.18. Maximum permissible repetitive avalanche
current(I_AV) versus avalanche time(t_AV) for unclamped
inductive loads.
+ ^VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.19. Switching test circuit.
December 1999
6
Rev 1.000