BUK7640-100A Datasheet, PDF (5/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7640-100A
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
-0100
-50
0
50
Tj / C
100
150
200
Fig.11. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
10
VGS / V ₉
8
7
6
5
4
3
2
1
0
0
VDS = 14V
VDS = 44V
10
20
30
40
QG / nC
Fig.14. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.12. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
1
10
VDS/V
Ciss
Coss
Crss
100
Fig.13. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
Source-Drain Diode Current, IF (A)
50
VGS = 0 V
45
40
35
30
175 C
25
20
Tj = 25 C
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Fig.15. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
W_DSS% = f(T_mb); conditions: I_D = 75 A
December 1999
5
Rev 1.000