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BUK7509-55A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
BUK75/7609-55A
TrenchMOS⢠standard level FET
Table 5: Characteristicsâ¦continued
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Min
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
-
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = â100 A/µs
-
Qr
recovered charge
VGS = â10 V; VDS = 30 V
-
Typ
Max
Unit
0.85
1.2
V
55
-
ns
43
-
nC
9397 750 09882
Product data
Rev. 01 â 6 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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