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BUK7509-55A Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET
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Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 0 V; VDD = 44 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS 10 V; RG = 10 Ω;
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
Ls
internal source inductance from source lead to source
bond pad
BUK75/7609-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
55
-
-
V
50
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4
V
-
0.05
10
µA
-
−
500
µA
-
2
100
nA
-
7.7
9
mΩ
-
-
18
mΩ
-
62
-
nC
-
12
-
nC
-
25
-
nC
-
2453
3271
pF
-
540
662
pF
-
299
427
pF
-
17
-
ns
-
58
-
ns
-
78
-
ns
-
55
-
ns
-
4.5
-
nH
-
3.5
-
nH
-
2.5
-
nH
-
7.5
-
nH
9397 750 09882
Product data
Rev. 01 — 6 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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