BUK223-50Y Datasheet, PDF (6/8 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK223-50Y
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ V_BG ≤ 35 V, limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_L(lim)
V_BL(TO)
t_{d sc}
Overload protection
Load current limiting
V_BL = V_BG
V_BG ≥ 9 V
Short circuit load protection
Battery load threshold voltage¹
Response time²
Overtemperature protection
V_BL > V_BL(TO)
38 55 72
A
V_BG = 16 V
8
10 12
V
V_BG = 35 V 15
20
25
V
- 180 250 µs
T_j(TO)
Threshold junction
temperature³
150 170 190 ˚C
∆T_j(TO)
Hysteresis
-
10
-
˚C
SWITCHING CHARACTERISTICS
T_mb = 25 ˚C, V_BG = 13 V, for resistive load R_L = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
t_{d on}
dV/dt_on
During turn-on
Delay time
Rate of rise of load voltage
to V_IG = 5 V
to 10% V_L
30% to 70% V_L
t _on
Total switching time
to 90% V_L
t_{d off}
dV/dt_off
t _off
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
to V_IG = 0 V
to 90% V_L
70% to 30% V_L
to 10% V_L
MIN. TYP. MAX. UNIT
-
50 70 µs
-
0.4
1 V/µs
- 140 200 µs
-
70 95 µs
-
0.6
1 V/µs
- 105 140 µs
CAPACITANCES
T_mb = 25 ˚C; f = 1 MHz; V_IG = 0 V. designed in parameters.
SYMBOL PARAMETER
CONDITIONS
C_ig
Input capacitance
C_bl
Output capacitance
C_sg
Status capacitance
V_BG = 13 V
V_BL = 13 V
V_SG = 5 V
MIN.
-
-
-
TYP.
15
320
11
MAX.
20
450
15
UNIT
pF
pF
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. A graph showing V_BL(TO) versus
V_BG will be provided in the product specification. After short circuit protection has operated, the input voltage must be toggled low for the
switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
November 2002
6
Rev 2.000