BUK223-50Y Datasheet, PDF (5/8 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK223-50Y
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
V_BG(UV)
∆V_BG(UV)
Low supply threshold voltage¹
Hysteresis
Overvoltage
2
4.2 5.5
V
-
0.5
-
V
V_BG(OV)
∆V_BG(OV)
High supply threshold voltage²
Hysteresis
40 45 50
V
-
1
-
V
TRUTH TABLE
INPUT
L
H
H
H
H
H
H
ABNORMAL CONDITIONS
DETECTED
SUPPLY
LOAD
UV OV LC SC OT
X
X
X
X
X
0
0
0
0
0
0
0
1
0
0
1
0
X
X
X
0
1
X
0
0
0
0
0
1
X
0
0
0
0
1
LOAD
OUTPUT STATUS
DESCRIPTION
OFF
ON
ON
OFF
OFF
OFF
OFF
H
off
H
on & normal
L
on & low current detect
H
supply undervoltage lockout
H
supply overvoltage shutdown
L
SC tripped
L
OT shutdown³
KEY TO ABBREVIATIONS
L logic low
H logic high
X don’t care
0 condition not present
1 condition present
UV undervoltage
OV overvoltage
LC low current or open circuit load
SC short circuit
OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
November 2002
5
Rev 2.000