BUK205-50Y Datasheet, PDF (6/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version of BUK201-50Y

Philips Semiconductors
TOPFET high side switch
SMD version of BUK201-50Y
Product specification
BUK205-50Y
VBG
VSG
VIG
VBL
IB
II
B
I
TOPFET
IL
IS
HSS ^L
S
G
VLG
RS
IG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.5. Normalised limiting power dissipation.
P_D% = 100⋅P_D/P_D(25 ˚C) = f(T_mb)
IL / A
20
BUK205-50Y
15
10
5
0
0
50 _{Tmb / C}
100
150
Fig.6. Limiting continuous on-state load current.
I_L = f(T_mb); conditions: V_IG = 5 V, V_BG = 13 V
IL / A
40
30
20
10
BUK205-50Y
VBG / V = 13
7
6
5
0
0
0.5
1
1.5
2
VBL / V
Fig.7. Typical on-state characteristics, T_j = 25 ˚C.
I_L = f(V_BL); parameter V_BG; t_p = 250 µs
RON / mOhm
100
BUK205-50Y
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_ON = f(V_BG); conditions: I_L = 7.5 A; t_p = 300 µs
RON / mOhm
150
BUK205-50Y
VBG =
5V
100
13 V
50
typ.
0
-60
-20
20
60
100
140
180
Tmb / C
Fig.9. Typical on-state resistance, t_p = 300 µs.
R_ON = f(T_j); parameter V_BG; condition I_L = 1.5 A
July 1996
6
Rev 1.000