BUK205-50Y Datasheet, PDF (10/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version of BUK201-50Y

Philips Semiconductors
TOPFET high side switch
SMD version of BUK201-50Y
Product specification
BUK205-50Y
VLG / V
-10
-12
-14
IL =
1 mA
BUK205-50Y
-16
7.5 A
-18
tp = 300 us
-20
-22
-60
-20
20
60
100
140
180
Tj / C
Fig.28. Typical negative load clamping voltage.
V_LG = f(T_j); parameter I_L; condition V_IG = 0 V.
VBL / V
65
60
55
tp = 300 us
BUK205-50Y
IL =
4A
1 mA
100 uA
50
-60
-20
20
60
100
140
180
Tj / C
Fig.29. Typical battery to load clamping voltage.
V_BL = f(T_j); parameter I_L; condition I_G = 5 mA.
IG / mA
0
BUK205-50Y
-50
-100
-150
-20
-15
-10
-5
0
VBG / V
Fig.30. Typical reverse battery characteristic.
I_G = f(V_BG); conditions I_L = 0 A, T_j = 25 ˚C
IL / A
0
BUK205-50Y
-10
-20
-30
-40
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
VLB / V
Fig.31. Typical reverse diode characteristic.
I_L = f(V_BL); conditions V_IG = 0 V, T_j = 25 ˚C
Cbl
10 nF
BUK205-50Y
1 nF
100 pF
0
10
20
30
40
50
VBL / V
Fig.32. Typical output capacitance. T_mb = 25 ˚C
C_bl = f(V_BL); conditions f = 1 MHz, V_IG = 0 V
IL / A
60
50
VBL(TO) typ.
40 ^{tp =}
30
300 us
BUK205-50Y
current limiting
50 us
i.e. before short
circuit load trip
20
10
0
0
5
10
15
20
25
VBL / V
Fig.33. Typical overload characteristic, T_mb = 25 ˚C.
I_L = f(V_BL); condition V_BG = 13 V; parameter t_p
July 1996
10
Rev 1.000