BUK110-50GS Datasheet, PDF (6/11 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK110-50GS
RDSON / Ohm
0.06
VIS / V =
5
0.05
BUK110-50GS
6
7 8 9 10
0.04
0.03
0.02
0.01
0
0 20 40 60 80 100 120 140 160
ID / A
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_IS; t_p = 250 µs
ID / A
160
BUK110-50GS
140
120
100
80
60
40
20
0
0
2
4
6
8
10
12
VIS / V
Fig.9. Typical transfer characteristics, T_j = 25 ˚C.
I_D = f(V_IS) ; conditions: V_DS = 10 V; t_p = 250 µs
gfs / S
30
BUK110-50GS
20
10
0
0
50
100
150
ID / A
Fig.10. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 10 V; t_p = 250 µs
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.11. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_DS(ON)25 ˚C = f(T_j); I_D = 25 A; V_IS = 10 V
td sc / ms
10
BUK110-50GS
PDSM
1
0.1
0.1
1
10
PDS / kW
Fig.12. Typical overload protection characteristics.
t_{d sc} = f(P_DS); conditions: V_IS ≥ 5 V; T_j = 25 ˚C.
PDSM%
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised limiting overload dissipation.
P_DSM% =100⋅P_DSM/P_DSM(25 ˚C) = f(T_mb)
June 1996
6
Rev 1.000