BUK110-50GS Datasheet, PDF (1/11 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK110-50GS
DESCRIPTION
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic surface mount
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DS
I_D
P_D
T_j
R_DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
V_IS = 10 V
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
50
125
150
28
UNIT
V
A
W
˚C
mΩ
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT404
PIN
DESCRIPTION
1 input
2 drain
3 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb
D
TOPFET
2
13
I
P
S
June 1996
1
Rev 1.000