BUK108-50GS Datasheet, PDF (6/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
ID / A
60
11
10
BUK108-50GS
50
9
8
40
7
30
6
20
5
4
10
3
0
0
4
8
12
16
20
24
28
32
VDS / V
Fig.6. Typical output characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs & t_p < t_{d sc}
ID / A
50
40
30
20
BUK108-50GS
VIS / V = 8 9 10
7
6
5
10
4
0
0
1
2
3
4
5
VDS / V
Fig.7. Typical on-state characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs
RDS(ON) / Ohm
0.20
0.15
4
0.10
BUK108-50GS
VIS / V =
5
6
7
89
10
0.05
0
0
10
20
30
40
50
ID / A
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_IS; t_p = 250 µs
ID / A
60
BUK108-50GS
50
40
30
20
10
0
0
2
4
6
8
10
12
VIS / V
Fig.9. Typical transfer characteristics, T_j = 25 ˚C.
I_D = f(V_IS) ; conditions: V_DS = 10 V; t_p = 250 µs
gfs / S
12
BUK108-50GS
11
10
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
ID / A
Fig.10. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 10 V; t_p = 250 µs
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.11. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_DS(ON)25 ˚C = f(T_j); I_D = 7.5 A; V_IS = 5 V
June 1996
6
Rev 1.000