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| BUK108-50GS Datasheet, PDF (4/12 Pages) NXP Semiconductors – PowerMOS transistor TOPFET | |||
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
INPUT CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VIS(TO)
IIS
VISR
VISR
IISL
V(BR)IS
RIG
Input threshold voltage
Input supply current
Protection reset voltage1
Protection reset voltage
Input supply current
Input clamp voltage
Input series resistance
VDS = 5 V; ID = 1 mA
VIS = 10 V; normal operation
Tj = 150 ËC
VIS = 10 V; protection latched
II = 10 mA
to gate of power MOSFET
1.0 1.5 2.0 V
-
0.4 1.0 mA
2.0 2.6 3.5 V
1.0
-
-
1.0 2.5 5.0 mA
11 13
-
V
-
4
-
kâ¦
TRANSFER CHARACTERISTICS
Tmb = 25 ËC
SYMBOL PARAMETER
gfs
Forward transconductance
ID(SC)
Drain current2
CONDITIONS
VDS = 10 V; IDM = 7.5 A tp ⤠300 µs;
δ ⤠0.01
VDS = 13 V; VIS = 10 V
MIN. TYP. MAX. UNIT
5
9
-
S
-
40
-
A
SWITCHING CHARACTERISTICS
Tmb = 25 ËC. RI = 50 ⦠. Refer to waveform figures and test circuits.
SYMBOL PARAMETER
CONDITIONS
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VDD = 13 V; VIS = 10 V
resistive load RL = 4 â¦
VDD = 13 V; VIS = 0 V
resistive load RL = 4 â¦
VDD = 13 V; VIS = 10 V
inductive load IDM = 3 A
VDD = 13 V; VIS = 0 V
inductive load IDM = 3 A
MIN.
-
-
-
-
-
-
-
-
TYP.
1
4
10
5
1
0.5
15
0.5
MAX.
-
-
-
-
-
-
-
-
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS
Continuous forward current
CONDITIONS
Tmb ⤠25 ËC; VIS = 0 V
MIN.
-
MAX.
15
UNIT
A
1 The input voltage below which the overload protection circuits will be reset.
2 During overload before short circuit load protection operates.
June 1996
4
Rev 1.000
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