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| BUJD203AX_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
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NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Static characteristics
ICES
ICBO
ICEO
IEBO
VCEOsus
collector-emitter cut-off current
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
collector-emitter sustaining
voltage
VBE = 0 V; VCE = 850 V; Tj = 125 °C
VBE = 0 V; VCE = 850 V; Tj = 25 °C
VCB = 850 V; IE = 0 A
VCE = 425 V; IB = 0 A
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA; LC = 25 mH;
see Figure 6; see Figure 7
[1] -
[1] -
[1] -
[1] -
-
400
VCEsat
collector-emitter saturation
IC = 3 A; IB = 0.6 A; see Figure 8;
-
voltage
see Figure 9
VBEsat
base-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 10
-
VF
forward voltage
IF = 2 A; Tj = 25 °C
-
hFE
DC current gain
IC = 1 mA; VCE = 5 V; Th = 25 °C;
10
see Figure 11
IC = 500 mA; VCE = 5 V; Th = 25 °C;
13
see Figure 11
IC = 2 A; VCE = 5 V; Th = 25 °C;
11
see Figure 11
IC = 3 A; VCE = 5 V; Th = 25 °C;
-
see Figure 11
Dynamic characteristics
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
-
RL = 75 â¦; Tj = 25 °C; resistive load;
see Figure 12; see Figure 13
ts
storage time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
-
RL = 75 â¦; Tj = 25 °C; resistive load;
see Figure 12; see Figure 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
-
LB = 1 µH; Tj = 25 °C; inductive load;
see Figure 14; see Figure 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
-
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
-
RL = 75 â¦; Tj = 25 °C; resistive load;
see Figure 12; see Figure 13
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
-
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
-
LB = 1 µH; Tj = 25 °C; inductive load;
see Figure 14; see Figure 15
[1] Measured with half-sine wave voltage (curve tracer)
Typ Max Unit
-
2
mA
-
1
mA
-
1
mA
-
0.1 mA
-
10 mA
450 -
V
0.29 1
V
0.99 1.5 V
1.04 1.5 V
15
32
21
32
16
22
12.5 -
0.52 0.6 µs
2.7 3.3 µs
1.2 1.4 µs
-
1.8 µs
0.3 0.35 µs
-
0.12 µs
0.03 0.06 µs
BUJD203AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 27 September 2010
© NXP B.V. 2010. All rights reserved.
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