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BUJD203AX_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode
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NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-h)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Conditions
with heatsink compound; see Figure 5
in free air
Min Typ Max Unit
-
-
4.8 K/W
-
55 -
K/W
10
Zth(j-h)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10−1 0.02
001aag169
P
tp
δ=
1/f
10−2 0
10−3
10−6
10−5
10−4
10−3
10−2
tp
1/f
10−1 1
t
10 102
tp (s)
Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Visol(RMS)
Cisol
Isolation characteristics
Parameter
RMS isolation voltage
isolation capacitance
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C;
from all terminals to external heatsink; clean
and dust free
Th = 25 °C; f = 1 MHz; from collector to
external heatsink
Min Typ Max Unit
-
-
2500 V
-
10
-
pF
BUJD203AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
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