BUJ204AX Datasheet, PDF (6/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ204AX
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig.13.
100
200
300 400 500 600 700
VCEclamp (V)
800
900 1,000
Reverse bias safe operating area. T_j ≤ T_{j max}
VCC
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
V_cl ≤ 1000V; V_cc = 150V; V_BB = -5V;
L_B = 1µH; L_c = 200µH
IC (A)
100
Icm max
10
Ic max
1
Duty cycle = 0.01
(1)
II
tp =
10us
100us
0.5ms
I
(2)
2ms
0.1
10ms
III
DC
Fig.15.
0.01
1
10
100
1,000
VCEclamp (V)
Forward bias safe operating area. T_hs ≤ 25 ˚C
(1) P_tot max and P_tot peak max lines.
(2) Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
R_BE ≤ 100 Ω and t_p ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
August 1998
5
Rev 1.000