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| BUJ204AX Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product speciï¬cation
BUJ204AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ⤠65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 1
ICES
ICBO
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCBO = VCESMmax(850V)
VCEO = VCEOMmax(450V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4 A; IB = 0.8 A
IC = 4 A; IB = 0.8 A
IC = 5 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
IC = 2.5 A; VCE = 5 V
IC = 4 A; VCE = 5 V
MIN.
-
-
TYP.
-
-
MAX. UNIT
1.0 mA
2.0 mA
-
-
0.1 mA
-
-
0.1 mA
-
-
0.1 mA
450
-
-
V
- 0.29 1.5 V
- 1.01 1.3 V
10 19 35
14 25 35
14.5 17 19.5
-
12
-
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
0.57 0.8 µs
3.4
4
µs
0.34 0.47 µs
1.37 1.5 µs
88 150 ns
-
1.6 µs
-
200 ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
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