BFR92A Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92A
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
G _UM
MSG
MBB280
10
G _max
0
10
10²
10³
10⁴
f (MHz)
I_C = 5 mA; V_CE = 10 V.
G_UM = maximum unilateral power gain; MSG = maximum stable gain;
G_max = maximum available gain.
Fig.9 Gain as a function of frequency;
typical values.
handbook,⁵h⁰alfpage
gain
(dB)
40
GUM
30
MSG
20
10
MBB281
Gmax
0
10
10²
10³
10⁴
f (MHz)
I_C = 15 mA; V_CE = 10 V.
G_UM = maximum unilateral power gain; MSG = maximum stable gain;
G_max = maximum available gain.
Fig.10 Gain as a function of frequency;
typical values.
handbook,⁴h⁰alfpage
BS
(mS)
20
0
2.0
1.8
1.7
20
MBB277
F = 3.0 dB
2.5
40
0
20
40
60
80
G _S (mS)
I_C = 4 mA; V_CE = 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure;
typical values.
1997 Oct 29
han_Bdb_Sook,³h⁰alfpage
(mS)
20
10
0
10
20
30
0
2.5
2.4
20
MBB276
F = 3.5 dB
3.0
40 _{G S (mS)} 60
I_C = 14 mA; V_CE = 10 V; f = 800 MHz.
Fig.12 Circles of constant noise figure;
typical values.
6