BFR92A Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92A
FEATURES
• High power gain
• Low noise figure
• Low intermodulation distortion.
APPLICATIONS
• RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic page
3
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MSB003
Marking code: P2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
F
noise figure
V_O
output voltage
CONDITIONS
T_s ≤ 95 °C
I_C = i_c = 0; V_CE = 10 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V; f = 500 MHz
I_C = 15 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 2 GHz;
T_amb = 25 °C
I_C = 5 mA; V_CE = 10 V; f = 1 GHz;
Γ_s = Γ_opt; T_amb = 25 °C
d_im = −60 dB; I_C = 14 mA; V_CE = 10 V;
R_L = 75 Ω; f_p + f_q − f_r = 793.25 MHz
TYP.
−
−
−
−
0.35
5
14
8
2.1
150
MAX.
20
15
25
300
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
−
dB
−
dB
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 95 °C; note 1; see Fig.3
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2
25
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
1997 Oct 29
2