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74HC3G06 Datasheet, PDF (6/14 Pages) NXP Semiconductors – Inverter with open-drain outputs
Philips Semiconductors
Inverter with open-drain outputs
Product specification
74HC3G06; 74HCT3G06
DC CHARACTERISTICS
Type 74HC3G06
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOL
LOW-level output voltage
ILI
input leakage current
ILO
output leakage current
ICC
quiescent supply current
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOL
LOW-level output voltage
ILI
input leakage current
ILO
output leakage current
ICC
quiescent supply current
TEST CONDITIONS
OTHER
VCC (V)
MIN.
2.0
4.5
6.0
2.0
4.5
6.0
VI = VIH or VIL
IO = 20 µA
2.0
IO = 20 µA
4.5
IO = 4.0 mA
4.5
IO = 20 µA
6.0
IO = 5.2 mA
6.0
VI = VCC or GND
6.0
VI = VIH;
6.0
VO = VCC or GND
VI = VCC or GND; IO = 0 6.0
1.5
3.15
4.2
−
−
−
−
−
−
−
−
−
−
−
2.0
4.5
6.0
2.0
4.5
6.0
VI = VIH or VIL
IO = 20 µA
2.0
IO = 20 µA
4.5
IO = 4.0 mA
4.5
IO = 20 µA
6.0
IO = 5.2 mA
6.0
VI = VCC or GND
6.0
VI = VIH;
6.0
VO = VCC or GND
VI = VCC or GND; IO = 0 6.0
1.5
3.15
4.2
−
−
−
−
−
−
−
−
−
−
−
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
0
0
0.15
0
0.16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
0.1
V
0.1
V
0.33 V
0.1
V
0.33 V
±1.0
µA
±5.0
µA
10
µA
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
0.1
V
0.1
V
0.4
V
0.1
V
0.4
V
±1.0
µA
±10
µA
20
µA
2003 Dec 02
6