74HC00 Datasheet, PDF (6/17 Pages) NXP Semiconductors – Quad 2-input NAND gate

Philips Semiconductors
Quad 2-input NAND gate
Product specification
74HC00; 74HCT00
DC CHARACTERISTICS
Type 74HC00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
V_CC (V)
T_amb = −40 to +85 °C; note 1
V_IH
HIGH-level input voltage
2.0
4.5
6.0
V_IL
LOW-level input voltage
2.0
4.5
6.0
V_OH
HIGH-level output voltage V_I = V_IH or V_IL
I_O = −20 µA
2.0
I_O = −20 µA
4.5
I_O = −20 µA
6.0
I_O = −4.0 mA
4.5
I_O = −5.2 mA
6.0
V_OL
LOW-level output voltage V_I = V_IH or V_IL
I_O = 20 µA
2.0
I_O = 20 µA
4.5
I_O = 20 µA
6.0
I_O = 4.0 mA
4.5
I_O = 5.2 mA
6.0
I_LI
input leakage current
V_I = V_CC or GND
6.0
I_OZ
3-state output OFF current V_I = V_IH or V_IL;
6.0
V_O = V_CC or GND
I_CC
quiescent supply current V_I = V_CC or GND; I_O = 0 6.0
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.84
5.34
−
−
−
−
−
−
−
−
TYP.
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
−
MAX. UNIT
−
V
−
V
−
V
0.5
V
1.35 V
1.8
V
−
V
−
V
−
V
−
V
−
V
0.1
V
0.1
V
0.1
V
0.33 V
0.33 V
±1.0
µA
±.5.0 µA
20
µA
2003 Jun 30
6