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US1 Datasheet, PDF (5/12 Pages) NXP Semiconductors – SMA ultra fast low-loss controlled avalanche rectifiers
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Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
102
handbook, halfpage
IR
(µA)
10
MCD807
Tj = 165 °C
1
10−1
10−2
10−3
0
Tj = 25 °C
20
40
60
80
100
VR (%VRmax)
US1A to G
f = 1 MHz; Tj = 25 °C.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
102
handbook, halfpage
IR
(µA)
10
MCD806
Tj = 165 °C
1
10−1
10−2
Tj = 25 °C
10−3
0
20
40
60
80
100
VR (%VRmax)
US1J
f = 1 MHz; Tj = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
102
handbook, halfpage
Cd
(pF)
10
MCD798
102
handbook, halfpage
Cd
(pF)
10
MCD797
1
10−2
10−1
1
10
102
VR (V)
1
10−2
10−1
1
10
102
VR (V)
US1 A to G
f = 1 MHz; Tj = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
US1J
f = 1 MHz; Tj = 25 °C.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
2000 Feb 14
5
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