US1 Datasheet, PDF (3/12 Pages) NXP Semiconductors – SMA ultra fast low-loss controlled avalanche rectifiers

Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
SYMBOL
PARAMETER
I_FSM
non-repetitive peak forward current
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
t = 8.3 ms half sine wave;
T_j = 25 °C prior to surge;
V_R = V_RRMmax
See Fig.3
MIN. MAX. UNIT
−
25
A
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
forward voltage
US1A to US1G
I_F = 1 A;
see Fig.4
US1J
see Fig.5
I_R
reverse current
V_R = V_RRMmax; see Figs 6 and 7
V_R = V_RRMmax; T_j = 165 °C; see Figs 6 and 7
t_rr
reverse recovery time
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.12
C_d
diode capacitance
V_R = 4 V; f = 1 MHz;
US1A to US1G
see Fig.8
US1J
see Fig.9
TYP. MAX. UNIT
−
1.1
V
−
1.4
V
−
10
µA
−
50
µA
−
50
ns
14
−
pF
10
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al₂O₃ printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3