TDA4665 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Baseband delay line

Philips Semiconductors
Baseband delay line
Product specification
TDA4665
CHARACTERISTICS
V_P = 5.0 V; input signals as specified in characteristics with 75% colour bars;
super-sandcastle frequency of 15.625 kHz; T_amb = 25 °C; measurements taken in Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply
V_P1
analog supply voltage (pin 9)
V_P2
digital supply voltage (pin 1)
I_P1
analog supply current
I_P2
digital supply current
Colour-difference input signals
V_i(p-p)
V_i(max)(p-p)
input signal (peak-to-peak value)
±(R−Y) PAL and NTSC (pin 16)
±(B−Y) PAL and NTSC (pin 14)
±(R−Y) SECAM (pin 16)
±(B−Y) SECAM (pin 14)
maximum symmetrical input signal
(peak-to-peak value)
±(R−Y) or ±(B−Y) for PAL and NTSC
±(R−Y) or ±(B−Y) for SECAM
note 1
before clipping
before clipping
R_{14, 16}
C_{14, 16}
V_{14, 16}
input resistance during clamping
input capacitance
input clamping voltage
proportional to V_P
Colour-difference output signals
V_o(p-p)
output signal (peak-to-peak value)
±(R−Y) on pin 11
±(B−Y) on pin 12
all standards
all standards
V₁₁/V₁₂
ratio of output amplitudes at equal input
signals
V_{i(14,16)(p-p)} = 1.33 V
V_{11, 12}
R_{11, 12}
G_v
V_n/V_n+1
DC output voltage
output resistance
gain for PAL and NTSC
gain for SECAM
ratio of delayed to non-delayed output
signals (pins 11 and 12)
proportional to V_P
ratio V_o/V_i
ratio V_o/V_i
V_{i(14,16)(p-p)} = 1.33 V;
SECAM signals
V_n(rms)
noise voltage (RMS value;
pins 11 and 12)
V_i(14,16) = 0 V; note 2
V_(11,12)(p-p) unwanted signals (line-locked)
(peak-to-peak value)
meander
V_i(14,16) = 0 V; active
video; R_S = 300 Ω
spikes
S/N(W)
∆t_d
weighted signal-to-noise ratio
(pins 11 and 12)
time difference between non-delayed and
delayed output signals (pins 11 and 12)
V_o(p-p) = 1 V; note 2
4.5
4.5
−
−
−
−
−
−
1
2
−
−
1.3
−
−
−0.4
2.5
−
5.3
−0.6
−0.1
−
−
−
−
63.94
5
5
4.8
0.7
525
665
1.05
1.33
−
−
−
−
1.5
1.05
1.33
0
2.9
330
5.8
−0.1
0
−
−
−
54
64
6
V
6
V
6.0
mA
1.0
mA
−
mV
−
mV
−
V
−
V
−
V
−
V
40
kΩ
10
pF
1.7
V
−
V
−
V
+0.4 dB
3.3
V
400
Ω
6.3
dB
+0.4 dB
+0.1 dB
1.2
mV
5
mV
10
mV
−
dB
64.06 µs
1996 Dec 17
5