R_10032 Datasheet, PDF (5/10 Pages) NXP Semiconductors – CA-330-11 LDMOS bias module

NXP Semiconductors
R_10032
CA-330-11; LDMOS bias module
3
V_gate
(V)
2.5
2
1.5
aaa-004139
(11)
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
1
0
20
40
60
80
100
temp
(1) P_tot = 0.
(2) P_tot = 10 W.
(3) P_tot = 20 W.
(4) P_tot = 30 W.
(5) P_tot = 40 W.
(6) P_tot = 50 W.
(7) P_tot = 60 W.
(8) P_tot = 70 W.
(9) P_tot = 80 W.
(10) P_tot = 90 W.
(11) P_tot = 100 W.
Fig 2. Gate voltage as a function of temperature
U2 is a high-current operational amplifier chosen because it is stable with any capacitive
load. As shown in Figure 3, the output impedance of the bias source is low (less than
2.5 ) because of the feedback around U2. However, practical LDMOS applications may
require an additional series gate resistor of 5  to 20  to ensure low-frequency device
stability.
R_10032
Report
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
5 of 10