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PSMN4R6-60BS Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 60 V, 4.4 m standard level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMN4R6-60BS
N-channel 60 V, 4.4 m⦠standard level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
minimum footprint; mounted on
a printed circuit board
Min Typ Max Unit
-
0.38 0.71 K/W
-
50
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10â1
10â2
0.2
0.1
0.05
0.02
single shot
003aad762
P
tp
δ= T
10â3
10â6
10â5
10â4
10â3
10â2
tp
t
T
10â1
tp (S)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 22 March 2012
© NXP B.V. 2012. All rights reserved.
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