PSMN4R6-60BS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 60 V, 4.4 m standard level MOSFET in D2PAK

PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current is limited by package.
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; see Figure 1
T_mb = 25 °C; see Figure 2
Min
-
[1] _-
-
-55
V_GS = 10 V; I_D = 25 A; T_j = 100 °C; see
-
Figure 12; see Figure 13
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
-
see Figure 13
V_GS = 10 V; I_D = 25 A; V_DS = 30 V;
-
see Figure 14; see Figure 15
-
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
-
V_sup ≤ 60 V; R_GS = 50 Ω; unclamped
Typ Max Unit
-
60 V
-
100 A
-
211 W
-
175 °C
5.98 7
mΩ
3.74 4.4 mΩ
14.8 -
nC
70.8 -
nC
-
266 mJ