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| PSMN017-30EL_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 30 V 17 mΩ logic level MOSFET in I2PAK | |||
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NXP Semiconductors
PSMN017-30EL
N-channel 30 V 17 m⦠logic level MOSFET in I2PAK
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
f = 1 MHz
ID = 10 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
ID = 10 A; VDS = 15 V; see Figure 14;
see Figure 15
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.7 2.15 V
0.5 -
-
V
-
-
2.45 V
-
0.3 1
µA
-
-
50 µA
-
10
100 nA
-
10
100 nA
-
-
43.2 mâ¦
-
18.7 23.4 mâ¦
-
24
31.5 mâ¦
-
-
23.5 mâ¦
-
13.4 17
mâ¦
-
2.03 -
â¦
-
10.7 -
nC
-
9.55 -
nC
-
5.1 -
nC
-
1.52 -
nC
-
1
-
nC
-
0.5 -
nC
-
1.94 -
nC
-
2.86 -
V
-
552 -
pF
-
127 -
pF
-
64
-
pF
PSMN017-30EL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 3 April 2012
© NXP B.V. 2012. All rights reserved.
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